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Izixhobo zeCeramic zeSemiconductor Probe Equipment
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Isithwali sezixhobo zeSemiconductor zeCeramic Plate
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Izixhobo zeSemiconductor Izixhobo zeCeramic
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Indandatho yeSeal ye-Alumina Ceramic ecocekileyo kakhulu yokutywinwa kwegumbi lobushushu obuphezulu
Indandatho yesitywino se-ceramic yaseSt.Cera yenzelwe njengendlela eyahlukileyo kwiindandatho ze-polymer O kwiindawo ezigqithisileyo apho ii-elastomers ziwohloka khona. Yenziwe nge-99.8% ye-alumina ecocekileyo kakhulu (Al₂O₃), le ndandatho yesitywino eqinileyo isetyenziswa kwiindawo zokutywina ezingashukumiyo — zihlala zidibene ne-gasket yesinyithi ethambileyo okanye i-graphite — ukubonelela nge-vacuum okanye i-gas containment ethembekileyo kumaqondo obushushu afikelela kwi-800°C nakwiindawo ezirhabaxa ze-plasma okanye zeekhemikhali. Le nto ayiniki gesi iphumayo, amandla aphezulu okuxinzelela (amandla angaphantsi e-flexural 361 MPa), kunye nokungasebenzi kakuhle kweekhemikhali (ukuxhathisa ii-halogens, ii-acids, kunye ne-alkalis ngaphandle kwe-HF). Iindawo zokutywina ezifakwe ngokuchanekileyo (ukuthe tyaba ≤5 μm, ukurhabaxa komphezulu we-Ra ≤0.2 μm) ziqinisekisa ukudibana okuqinileyo nentsimbi edibanayo okanye izinto ze-ceramic.
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Indandatho yokugxila yeChamber ye-Alumina ecocekileyo kakhulu yePlasma Etch kunye neeNkqubo zeCVD
Iring yokugxila kwigumbi likaSt.Cera yinxalenye ebalulekileyo yekhithi yenkqubo esetyenziswa kwizixhobo ze-plasma etch, CVD, kunye ne-PVD semiconductor. Yenziwe nge-99.8% ye-high-purity alumina (Al₂O₃), le ring ijikeleza umphetho we-wafer ukuze ivalele i-plasma kwaye iphucule ukusasazwa kwe-ion angular, ngaloo ndlela iphucula ukufana kwe-etch kumphezulu we-wafer. Le nto inika ukumelana okugqwesileyo kwe-plasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ukuthembeka kwexesha elide kwiindawo ze-plasma ezisekelwe kwi-fluorine okanye kwi-chlorine. I-Precision-ground ID/OD kunye ne-flatness (≤10 μm) zenza kube lula ukubeka umphetho we-wafer ngokuchanekileyo, ukunciphisa iziphene zomphetho kunye nokuveliswa kwamasuntswana.
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Indandatho yeCeramic ye-Alumina ecocekileyo ephezulu yeeCandelo zeNkqubo zeCVD / PVD
Indandatho yeseramikhi yaseSt.Cera yenzelwe ngokukodwa ukusetyenziswa kwiigumbi zenkqubo zeCVD (Chemical Vapor Deposition) kunye nePVD (Physical Vapor Deposition). Yenziwe nge-99.8% ye-alumina ephezulu-ecocekileyo (Al₂O₃), le ndandatho isebenza njenge-chamber liner, i-focus ring, okanye icandelo le-process kit ukuvala iplasma kunye nokukhusela iindonga zegumbi ekukhukulisekeni. Le nto inika ukumelana okuhle kweplasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ubomi obude kwiindawo zeplasma ezisekelwe kwi-fluorine. Ukunyamezelana okuchanekileyo (±0.05 mm kwi-ID/OD) kunye nokuthamba (≤10 μm) kuvumela ukubeka umda we-wafer rhoqo, ukuphucula ukufana kwe-deposition kunye nokunciphisa ukuveliswa kwamasuntswana.
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I-Bernoulli Ceramic End Effector — Ukuphathwa kweWafer engadibaniyo kwiiWafers ezibhityileyo nezibuthathaka
I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ii-wafers ngaphandle kokudibana ngokwasemzimbeni. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) okanye i-silicon carbide (SiC), inee-nozzles ezichanekileyo ezikhupha igesi ecinezelweyo ukwenza ifilimu yomoya encinci phakathi kwe-end effector kunye ne-wafer. Lo mgaqo wokungadibani ususa ungcoliseko lwangasemva, ukuqhekeka komphetho, kunye nomonakalo womphezulu, okwenza ukuba ilungele ii-wafers ezincinci (≤100 μm), ezibuthathaka, okanye ezigobileyo. I-substrate ye-ceramic inika amandla aphezulu okugoba (361 MPa ye-Al₂O₃; ukuya kuthi ga kwi-550–600 MPa ye-SiC), ubunzima obuphantsi, kunye nozinzo oluhle kakhulu, ukuqinisekisa indawo ephindaphindwayo kwiirobhothi zokudlulisa ii-wafer ezikhawulezayo.
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Izixhobo zeCeramic ze-Alumina ezicocekileyo eziphezulu zeSemiconductor kunye nezicelo zeMizi-mveliso
I-St.Cera ivelisa iindawo ze-ceramic ze-alumina ezichanekileyo (Al₂O₃) ngokweemfuno zabathengi. Zisebenzisa i-alumina ene-99.8% ephezulu-ecocekileyo, ezi zinto zibonelela ngamandla agqwesileyo okugoba (361 MPa), ubunzima obuphezulu (16 GPa), kunye namandla abalaseleyo e-dielectric (15×10⁶ V/m). Zenzelwe izixhobo ze-semiconductor, ii-assembly ezinganyangekiyo, ii-insulators zombane, kunye nezixhobo zobushushu obuphezulu, ezi zinto zibonelela ngokufunxwa kwamanzi okuphantse kube zero (0%) kunye ne-coefficient yokwandiswa kobushushu ye-7.2×10⁻⁶/℃, ukuqinisekisa uzinzo olulinganayo phantsi kweemeko ezinzima.
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I-Porous Ceramic Vacuum Chuck yokuphatha iWafer eWarped
I-St.Cera's porous ceramic chuck yenziwe nge-high-purity alumina ene-porosity evulekileyo efanayo ye-30–45% kunye nobukhulu be-pore obuqala kwi-10 ukuya kwi-100 μm. Ngokungafaniyo nee-groove chucks eziqhelekileyo, umphezulu we-porous ubonelela nge-vacuum esasazekileyo kuyo yonke i-wafer ngasemva, ibamba ngokufanelekileyo ii-wafers ezigobileyo, ezibhityileyo, okanye ezingenanto ngaphandle kokuphakamisa okanye ukwaphuka komphetho. I-vacuum ethambileyo (ehlengahlengiswayo nge-restrictor) ikwathintela ukuphawulwa kwe-backside.
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I-Alumina-Based Porous Ceramic Vacuum Chuck yokuphatha i-Thin Wafer
I-chuck ye-alumina esekwe kwi-alumina yenziwe nge-99.6% ye-Al₂O₃ ecocekileyo kakhulu ene-porosity evulekileyo elawulwayo ye-30–45% kunye nobukhulu obufanayo be-pore ukusuka kwi-10 ukuya kwi-50 μm. Ngokungafaniyo nee-chucks ezine-grooved, umphezulu we-porous ubonelela nge-vacuum esasazekileyo kuyo yonke i-wafer ngasemva, ukuphelisa uphawu lomphetho kwaye uvumela ukubanjwa ngobunono kwee-wafers ezincinci kakhulu (≤100 μm) okanye ezigobileyo. Le nto inika amandla okugoba angama-≥250 MPa kunye nozinzo lobushushu olufikelela kwi-400°C emoyeni.
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Ipleyiti yoSasazo lweGesi yeAlumina ye-CVD/PVD Showerhead
Ipleyiti yokusasaza igesi yaseSt.Cera (intloko yeshawa) yenziwe ngomatshini ochanekileyo owenziwe nge-99.8% alumina ceramic ecocekileyo kakhulu. Inemibhobho emincinci (ububanzi obuyi-0.3–1.5 mm) eqinisekisa ukuhamba kwegesi okufanayo kumphezulu we-wafer ngexesha leenkqubo ze-CVD, PVD, okanye ze-ALD. Amandla aphezulu e-dielectric yepleyiti (>15×10⁶ V/m) kunye nokumelana neplasma kwenza kube yimfuneko ekufakweni kwefilimu encinci ye-semiconductor.
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Iphini yokuxhasa iCeramic yeMixtures yeNkqubo yeSemiconductor
Iipini ezixhasayo ze-ceramic zikaSt.Cera (ezaziwa ngokuba ziipini zokuphakamisa okanye iipini zokuxhasa) zisetyenziswa kwiindawo zenkqubo ye-semiconductor ukuphakamisa ii-wafers okanye ii-substrates ngexesha lokuphatha, ukufudumeza, okanye ukupholisa. Zenziwe nge-99.8% ye-alumina okanye i-silicon nitride, ezi pini zinika amandla aphezulu okuxinzelela, uzinzo lobushushu, kunye nokumelana neekhemikhali. Uyilo lwe-hemispherical okanye oluthe tyaba luthintela ukukrwela ii-wafer.
