Idityaniswe neenzuzo zokusebenza ezipheleleyo zezinto ze-substrate ze-Al2O3 zemveli kunye ne-BeO, i-Aluminium Nitride (AlN) ceramic, ene-thermal conductivity ephezulu (i-monocrystal's theoretical thermal conductivity yi-275W/m▪k，i-polycrystal's theoretical thermal conductivity yi-70~210W/m▪k), i-dielectric constant ephantsi, i-thermal expansion coefficient ehambelana ne-single crystal silicon, kunye ne-electrical insulation properties ezilungileyo, zizinto ezifanelekileyo ze-circuit substrates kunye nokupakisha kwishishini le-microelectronics. Ikwayinto ebalulekileyo kwi-structural structure components ze-ceramic ezishushu kakhulu ngenxa ye-mechanical properties ezilungileyo, i-thermal properties kunye nozinzo lweekhemikhali.
Uxinano lwethiyori lwe-AlN yi-3.26g/cm3, ubunzima be-MOHS yi-7-8, ukumelana nobushushu begumbi kungaphezulu kwe-1016Ωm, kwaye ukwanda kobushushu yi-3.5×10-6/℃ (ubushushu begumbi yi-200℃). Iiseramikhi ze-AlN ezicocekileyo azinambala kwaye ziyabonakala, kodwa ziya kuba nemibala eyahlukeneyo efana nongwevu, umhlophe ongwevu okanye umthubi okhanyayo, ngenxa yokungcola.
Ukongeza kwi-thermal conductivity ephezulu, ii-AlN ceramics nazo zinezibonelelo ezilandelayo:
1. Ubushushu obuhle bombane;
2. I-coefficient efanayo yokwandiswa kobushushu kunye ne-silicon monocrystal, egqwesileyo kunezixhobo ezifana ne-Al2O3 kunye ne-BeO;
3. Amandla aphezulu oomatshini kunye namandla afanayo okugoba kunye neeseramikhi ze-Al2O3;
4. Ukulahleka okuphakathi kwe-dielectric constant kunye ne-dielectric;
5. Xa kuthelekiswa ne-BeO, ukuhanjiswa kobushushu beeseramikhi ze-AlN akuchaphazeleki kangako bubushushu, ingakumbi ngaphezulu kwama-200℃;
6. Ukumelana nobushushu obuphezulu kunye nokumelana nokugqwala;
7. Ayinatyhefu;
8. Ingasetyenziswa kushishino lwe-semiconductor, kushishino lwe-chemical metallurgy kunye neminye imimandla yemizi-mveliso.
Ixesha lokuthumela: Julayi-14-2023