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I-Bernoulli Ceramic End Effector — Ukuphathwa kweWafer engadibaniyo kwiiWafers ezibhityileyo nezibuthathaka

I-Bernoulli Ceramic End Effector — Ukuphathwa kweWafer engadibaniyo kwiiWafers ezibhityileyo nezibuthathaka

Inkcazo emfutshane:

I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ii-wafers ngaphandle kokudibana ngokwasemzimbeni. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) okanye i-silicon carbide (SiC), inee-nozzles ezichanekileyo ezikhupha igesi ecinezelweyo ukwenza ifilimu yomoya encinci phakathi kwe-end effector kunye ne-wafer. Lo mgaqo wokungadibani ususa ungcoliseko lwangasemva, ukuqhekeka komphetho, kunye nomonakalo womphezulu, okwenza ukuba ilungele ii-wafers ezincinci (≤100 μm), ezibuthathaka, okanye ezigobileyo. I-substrate ye-ceramic inika amandla aphezulu okugoba (361 MPa ye-Al₂O₃; ukuya kuthi ga kwi-550–600 MPa ye-SiC), ubunzima obuphantsi, kunye nozinzo oluhle kakhulu, ukuqinisekisa indawo ephindaphindwayo kwiirobhothi zokudlulisa ii-wafer ezikhawulezayo.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ii-wafers ngaphandle kokudibana ngokwasemzimbeni. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) okanye i-silicon carbide (SiC), inee-nozzles ezichanekileyo ezikhupha igesi ecinezelweyo ukwenza ifilimu yomoya encinci phakathi kwe-end effector kunye ne-wafer. Lo mgaqo wokungadibani ususa ungcoliseko lwangasemva, ukuqhekeka komphetho, kunye nomonakalo womphezulu, okwenza ukuba ilungele ii-wafers ezincinci (≤100 μm), ezibuthathaka, okanye ezigobileyo. I-substrate ye-ceramic inika amandla aphezulu okugoba (361 MPa ye-Al₂O₃; ukuya kuthi ga kwi-550–600 MPa ye-SiC), ubunzima obuphantsi, kunye nozinzo oluhle kakhulu, ukuqinisekisa indawo ephindaphindwayo kwiirobhothi zokudlulisa ii-wafer ezikhawulezayo.

Inqaku kwiZixhobo:I-Alumina (Al₂O₃) yeyona nto isetyenziswa kakhulu kwizixhobo ze-ceramic end effectors ekuphatheni i-semiconductor wafer ngenxa yokudibanisa kwayo okugqwesileyo kobunzima, ukugquma kombane, ukuzinza kweekhemikhali, kunye nokusebenza kakuhle kweendleko. I-Silicon carbide (SiC) inika ukuhanjiswa kobushushu obuphezulu, ubunzima obuphezulu, kunye nokumelana nokuguguleka okungcono kwizicelo ezifuna kakhulu. Ngelixa i-yttria-stabilized zirconia (ZrO₂) inika ukuqina okuphezulu kokuqhekeka kubushushu begumbi, ayisetyenziswa rhoqo kolu setyenziso ngenxa yoxinano lwayo oluphezulu kunye neempawu ezahlukeneyo zokwandiswa kobushushu; inokuqwalaselwa kwiimeko ezithile apho kufuneka ukuqina okungaqhelekanga kokuqhekeka. Nceda uqhagamshelane neqela lethu lobuchwephesha ukuze ufumane isikhokelo sokukhetha izinto.

 

Iinkcukacha(isekelwe kwi-99.8% AlO):


Ipropati
  Ixabiso (AlO)
Izinto eziphathekayo   I-Alumina engama-99.8%
Uxinano   3.93 g/cm³
Amandla okuGuquka   I-361 MPa
Ukuqina Kokwaphuka   3–4 MPa·m¹/²
Ubunzima bukaVickers   16 GPa
IModulus kaYoung   380 GPa
Ukwanda kobushushu (25–1000°C)   7.2×10⁻⁶/℃
Ubushushu obuphezulu bokusebenza   800°C (umoya)
Uburhabaxa bomphezulu (ojonge kwi-wafer)   I-Ra ≤0.4 μm

 

Umgaqo Wokusebenza:

Umoya ocinezelweyo okanye i-nitrogen (0.2–0.6 MPa) unikezelwa ngemijelo yangaphakathi kwaye uphuma ngee-nozzles ezichanekileyo. Ukuhamba komoya okukhawulezileyo kudala indawo enoxinzelelo oluphantsi ngaphezu kwe-effector yokugqibela (isiphumo seBernoulli), ivelisa amandla okuphakamisa axhasa i-wafer kwisithuba se-50–200 μm. Akukho mingxunya ye-vacuum okanye ii-pads ezidibana ne-wafer ngasemva.

 

Izicelo:

  • · Ukuphathwa kwe-wafer encinci (≤50 μm) emva kokusila ngasemva
  • · Uthutho lwe-wafer olugobileyo (umz., emva kwe-CVD okanye i-annealing)
  • · Ukudluliselwa kwe-substrate yesafire yelanga kunye ne-LED
  • · Ukuzenzekela kwegumbi lokucoca okufuna ukuveliswa kweesuntswana ezingenanto
  • · Ukuphathwa kwephaneli yeglasi kwimiboniso

 

Inkqubo yoMveliso:

Isiseko seseramikhi esitshiswe ngomgubo ococekileyo kakhulu → Umatshini we-CNC ojikelezisiweyo we-5-axis wemijelo yegesi kunye nemingxunya yemilomo (ububanzi obuyi-0.3–1.0 mm, ukunyamezelana ±0.01 mm) → ukugoba komphezulu ukuya kwi-Ra ≤0.4 μm → ukucoca nge-ultrasonic → uvavanyo lokuvuza kwe-helium (imijelo yegesi). Akukho mfuneko yokwambathisa — umphezulu weseramikhi ongenanto awunakhemikhali kwaye awungcolisi.

 

Ulawulo lwemeko:

  • · Ukuhlolwa okulinganiselweyo kwe-100% (CMM) kweendawo zomlomo, ubude bengalo, kunye nokuba tyaba
  • · Uvavanyo lokufana komoya: ukuhla koxinzelelo ≤5% kuzo zonke ii-nozzles
  • · Uvavanyo lokuvuza: imijelo yegesi ivalwe kwi-0.6 MPa, akukho kwehla koxinzelelo kwimizuzwana engama-30
  • · Ukuhlolwa okubonakalayo phantsi kwe-microscope engama-20 × ukuze kubonwe imifantu emincinci okanye ii-burrs

 

Aiingenelo ngaphezu kweZiphumo zeSigqibo zoQhagamshelwano oluQhelekileyo:

  • · Akukho ngcoliseko ngasemva kwe-wafer — akukho kudibana koomatshini
  • · Akukho kuqhekeka komphetho okanye ukwaphuka kweewafers ezibhityileyo
  • · Iphatha iiwafers ezigobileyo (ukuya kuthi ga kwi-1 mm ibow) ezinesithuba esizinzileyo
  • · Isusa i-vacuum generator kunye nokugcinwa kwe-chuck enemingxuma
  • · Ulwakhiwo lweseramikhi luyamelana nokuguguleka kunye nokuhlaselwa ziikhemikhali

 

Ukwenziwa ngokwezifiso:

  • · Ifumaneka ngobukhulu obuyi-200 mm, 300 mm, okanye ubukhulu be-wafer obulungiselelwe wena
  • · Iipateni zemibhobho yegesi: iintlobo ezithe tye, ezigobileyo, okanye ezijikelezayo
  • · Izixhobo: i-alumina (esemgangathweni) okanye i-silicon carbide (yokuqhuba ubushushu obuphezulu kunye nokumelana nokuguguleka)
  • · Ubude bengalo, i-flange yokuyifaka, kunye nendawo yesango legesi ngokomzobo we-OEM

 

Imida:

Ukuphunyezwa komgaqo weBernoulli (uyilo lwe-nozzle, umsantsa womoya) kungaphaya komlinganiselo weetafile zeempawu zezinto ezibonelelweyo. Iimpawu zoomatshini nezobushushu ezingentla zilandela ngokungqongqo amaphepha edatha anikiweyo e-99.8% Al₂O₃. Akukho kuhla kokusebenza kwe-ceramic phantsi koxinzelelo lwegesi oluhambelanayo olulindelekileyo ngokusekelwe kwezi mpawu zezinto. Kwii-wafers ezibuthathaka kwi-gas flow (umz., ii-MEMS ezinezakhiwo ezibuthathaka), uxinzelelo lwegesi kunye noyilo lwe-nozzle kufuneka lulungiswe ngokufanelekileyo.


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