Indandatho yokugxila yeChamber ye-Alumina ecocekileyo kakhulu yePlasma Etch kunye neeNkqubo zeCVD
Iring yokugxila kwigumbi likaSt.Cera yinxalenye ebalulekileyo yekhithi yenkqubo esetyenziswa kwizixhobo ze-plasma etch, CVD, kunye ne-PVD semiconductor. Yenziwe nge-99.8% ye-high-purity alumina (Al₂O₃), le ring ijikeleza umphetho we-wafer ukuze ivalele i-plasma kwaye iphucule ukusasazwa kwe-ion angular, ngaloo ndlela iphucula ukufana kwe-etch kumphezulu we-wafer. Le nto inika ukumelana okugqwesileyo kwe-plasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ukuthembeka kwexesha elide kwiindawo ze-plasma ezisekelwe kwi-fluorine okanye kwi-chlorine. I-Precision-ground ID/OD kunye ne-flatness (≤10 μm) zenza kube lula ukubeka umphetho we-wafer ngokuchanekileyo, ukunciphisa iziphene zomphetho kunye nokuveliswa kwamasuntswana.
Iinkcukacha(isekelwe kwi-99.8% Al₂O₃):
| Ipropati | Ixabiso |
| Izinto eziphathekayo | I-99.8% ye-Alumina (i-Ivory) |
| Uxinano | 3.93 g/cm³ |
| Ukufunxwa kwamanzi | 0% |
| Amandla okuGuquka | I-361 MPa |
| Ukuqina Kokwaphuka | 3–4 MPa·m¹/² |
| Ubunzima bukaVickers | 16 GPa |
| IModulus kaYoung | 380 GPa |
| Ukuqhuba kweThermal | 32 W/m·k |
| Ukwanda kobushushu (25–1000°C) | 7.2×10⁻⁶/℃ |
| Amandla eDielectric | 15×10⁶ V/m |
| Ukuchasana Okuthile | >10¹⁴ Ω·cm |
| Ubushushu obuphezulu bokusebenza | 1600°C |
Izicelo:
- · Iiringi zokugxila kwigumbi le-etch ye-dielectric (i-oxide, i-nitride etch)
- · Iiringi zegumbi le-silicon etch
- · Iiringi zezixhobo zenkqubo yegumbi le-CVD
- · Ikhaka legumbi lePVD kunye neeringi ze-clamp
Inkqubo yoMveliso:
Umgubo we-alumina ococekileyo kakhulu ucinezelwa ngokwahlukileyo → oluhlaza ochwetheziweyo ukuya kwimo ephantse ibe yi-net → ucocwe kwi-1600°C → Ukugaywa kwedayimani ye-CNC ye-ID, i-OD, kunye nobukhulu → ukugoba ukuze kufunyanwe ukutyibilika ≤10 μm → ukucocwa nge-ultrasonic → ukuhlolwa kwe-100% CMM. Ukugqitywa komphezulu we-Ra ≤0.4 μm kunciphisa ukunamathela kwamasuntswana.
Ulawulo lwemeko:
- · Uhlolo oluyi-100% (ID, OD, ubukhulu, ukufana)
- · Uvavanyo lokugqobhoza ngedayi ukuze kubonwe ukuba kukho imifantu emincinci (akuvumelekanga ukuqhekeka)
- · Ukuhlolwa okubonakalayo phantsi kwe-microscope engama-20 × — akukho zitshiphusi, imingxunya, okanye ukutshintsha kombala
- · Uvavanyo lwamandla e-dielectric ngokwe-ASTM D149 (isampulu)
Iingenelo ngaphezu kweeRings zeSilicon okanye zeQuartz Focus:
- · Ubomi obude obuyi-5–10× kwi-plasma ye-fluorocarbon
- · Akukho masuntswana okukhukuliswa angasetyenziswayo ukuze kungcoliswe ii-wafers
- · Amandla aphezulu e-dielectric athintela ukungqubana
- · Igcina ukuchaneka okuthe tyaba kunye nobukhulu obuchanekileyo kwiiyure ezingamawaka ze-RF
Izinto Ezingatshintshiyo — I-Yttria-Stabilized Zirconia (ZrO2)₂):
Kwizicelo ezifuna ukuqina okuphezulu kokuqhekeka (umz., amagumbi anomjikelo oshushu rhoqo okanye ukutshayiswa koomatshini), iiringi zokugxila ze-ZrO₂ (ubuninzi obuyi-6.03 g/cm³, amandla okugoba ayi-1000 MPa, ukuqina kokuqhekeka okuyi-5–8 MPa·m¹/²) ziyafumaneka. Nangona kunjalo, i-alumina inika ukusebenza ngcono kweendleko kwaye yeyona migangatho zoshishino kwiizicelo ezininzi zeringi yokugxila.
Ukwenziwa ngokwezifiso:
- · Iiprofayili zezinyathelo, ii-counterbores, okanye imingxunya yokufaka ngomzobo ngamnye womthengi
- · Ingubo ye-Y₂O₃ yokukhusela ukukhukuliseka kwe-plasma (ubukhulu obuyi-20–100 μm)
- · Ukumakishwa kwenombolo yenxalenye, ikhowudi yomhla, okanye iimpawu zokulungelelanisa nge-laser
Phawula:Yonke idatha ilandela ngokungqongqo itheyibhile yepropathi ye-Al₂O₃ enikiweyo. Ukuze ufumane iinkcukacha ze-ZrO₂, jonga iphepha ledatha le-zirconia elinikiweyo. Uyilo lweringi yokugxila lunokufuna imvume yelungelo lomenzi — abathengi banoxanduva lokuqinisekisa amalungelo epropathi yobuchule.








