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Iinxalenye zeCeramic zeAlumina eziBalaseleyo zeCeramic Ring
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Izixhobo zeSemiconductor ezenziwe ngokwezifiso zeST.CERA IiChucks zeCeramic
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphatha I-Wafer Enobushushu Obuphezulu
I-St.Cera's SiC ceramic end effector yenziwe nge-silicon carbide ecocekileyo kakhulu (umxholo weSiC 99.72%, i-Si yamahhala 0.05%) kusetyenziswa izinto zebhetshi ye-S1111. Inika iipropati ezibalaseleyo zoomatshini: amandla e-flexural 449 MPa (elinganisiweyo), i-elastic modulus 457 GPa (elinganisiweyo), kunye nobunzima beVickers 25–28 GPa (eqhelekileyo). Uxinano oluphantsi (3.10–3.15 g/cm³, eqhelekileyo) lubonelela ngokuqina okuphezulu, okufanelekileyo kwiirobhothi zokudlulisa i-wafer ezikhawulezayo. Ngokuqhuba kobushushu obuyi-120–150 W/m·K (eqhelekileyo) kunye ne-thermal expansion coefficient ye-4.0–4.5×10⁻⁶/℃ (eqhelekileyo), le effector yokugqibela isusa ubushushu ngempumelelo kwaye igcina uzinzo olulinganayo ngexesha lokuphathwa kobushushu obuphezulu (ukuya kuthi ga kwi-1600–1700°C, akukho mthwalo). Umbala omnyama/ongwevu kunye nokufunxwa kwamanzi okungekho kuqinisekisa ukuhambelana kwegumbi lokucoca.
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I-Silicon Carbide (SiC) Based Vacuum Chuck yoBushushu obuphezulu kunye neendawo zePlasma
I-St.Cera's SiC-based ceramic chuck yenziwe nge-silicon carbide ecocekileyo kakhulu (i-batch S1111, i-SiC 99.72%, i-Si yamahhala 0.05%). Inika amandla okugoba alinganisiweyo angama-449 MPa, ubunzima bokuqhekeka obuyi-3.12 MPa·m¹/², kunye ne-elastic modulus engama-457 GPa. Ukuqhuba kobushushu obuqhelekileyo bezinto (120–150 W/m·K) kunye nokwanda kobushushu obuphantsi (4.0–4.5×10⁻⁶/℃) kuvumela ukurhawuzelelwa kobushushu ngokukhawuleza kunye nokugoba okuncinci kwe-wafer ngexesha lokujikeleza kobushushu. I-chuck ingacwangciswa njenge-vacuum chuck enemingxuma (ukuhamba kwegesi efanayo) okanye i-grooved standard chuck. Ngobushushu obuphezulu bokusetyenziswa obuyi-1600–1700°C (akukho mthwalo) kunye nokumelana nokukhukuliseka kweplasma okugqwesileyo, le chuck ifanelekile kwi-processing ye-wafer yobushushu obuphezulu (i-annealing, i-RTP) kunye nee-aggressive etch chambers apho ii-alumina chucks ziwohloka khona.
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Izixhobo zeSemiconductor Izixhobo zeCeramic Spare Parts Ceramic Carriers
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Indandatho Yokugaya ye-Alumina Ceramic Exhaswe Ngesinyithi kwiZicelo zokuLapha eziQinisekileyo
Indandatho yokugaya ye-alumina esekwe kwisinyithi yaseSt.Cera idibanisa umaleko wokugquma we-alumina ococekileyo kakhulu (99.8% Al₂O₃) kunye nesiseko sesinyithi esenziwe ngomatshini (ngesiqhelo i-aluminium okanye intsimbi engatyiwayo). Olu yilo lwe-hybrid lubonelela ngokumelana nokuguguleka okungaqhelekanga kunye nokungasebenzi kakuhle kweekhemikhali ze-ceramic kumphezulu wokugquma, ngelixa isiseko sesinyithi songeza amandla oomatshini, ukufakwa lula, kunye nokumelana nokuqhekeka okubuthathaka. Umaleko we-alumina unika amandla okuguguleka angama-361 MPa, ubunzima beVickers obuyi-16 GPa, kunye nokuzinza kobushushu ukuya kuthi ga kwi-800°C. Isiseko sesinyithi senziwe ngokwezifiso ngemingxunya yokugquma, iiphini zokufumana, okanye iimpawu zemagnethi zokudityaniswa koomatshini bokugquma, iigrinder zeplanethi, kunye nezixhobo ze-CMP.
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Izixhobo zeCeramic zeSemiconductor Probe Station Equipment
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Ukucutshungulwa okwenziwe ngokwezifiso kwe-Al2O3 Ceramic Wafer Chuck
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Ipleyiti yeCeramic yezixhobo zeSemiconductor ezenziwe ngokwezifiso ze-ST.CERA
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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I-Alumina Vacuum Chuck eyi-12-intshi yokucubungula i-Wafer eyi-300mm
I-vacuum chuck ye-St.Cera eyi-intshi ezili-12 yenziwe ngokuchanekileyo nge-99.8% ye-alumina ephezulu ecocekileyo (Al₂O₃) yokuphatha i-wafer ye-300mm. I-chuck inomphezulu ogobileyo (ububanzi be-groove buyi-0.5–1.0 mm, i-pitch 2–3 mm) ukuqinisekisa ukusasazwa kwe-vacuum okufanayo kuyo yonke i-300mm ububanzi. Ukuthamba kugcinwa ngaphakathi kwe-5 μm, okuvumela ukufakwa kwe-wafer engena-warp ngexesha lokusika, ukugaya ngasemva, kunye nokuhlolwa. Amandla aphezulu e-flexural (361 MPa) kunye nobunzima (16 GPa) kuqinisekisa uzinzo lwexesha elide nangona kujikelezwa i-vacuum rhoqo.
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Isiphumo Sokugqibela seCeramic seAlumina esineeChannels eziDibeneyo zeVacuum
Isixhobo sokuphelisa i-alumina seSt.Cera sidibanisa imijelo ye-vacuum eyenziwe ngomatshini ochanekileyo kunye nemingxunya yokufunxa ngqo emzimbeni we-alumina ococekileyo ophezulu we-99.8%. Olu yilo lususa ii-vacuum pads zangaphandle, nto leyo evumela ukuba i-wafer ithathwe ngqo ngamandla afanayo okubamba. Amandla aphezulu e-flexural (361 MPa) kunye nobunzima (16 GPa) kuqinisekisa uzinzo oluhlala ixesha elide phantsi kwemijikelo ye-vacuum ephindaphindwayo. Ukuthamba kwindawo ye-pad kugcinwa ngaphakathi kwe-10 μm, okuthintela uxinzelelo lwe-wafer kunye nokuqhekeka. Ii-vacuum ports zibekwe kwi-flange yokuqhoboshela ngasemva ukuze kube lula ukudibanisa neengalo zerobhothi ze-OEM.
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Izixhobo zeCeramic ze-Alumina eziKhuselekileyo ze-ESD zoLawulo lweWafer oluSensitive-Sensitive
Izixhobo ze-alumina ezikhuselekileyo zeSt.Cera's ESD (electrostatic discharge) zenziwe nge-99.8% ye-Al₂O₃ ecocekileyo kakhulu enokumelana nomphezulu okwenzelwe wena we-10⁶–10⁹ Ω/sq, efumaneka ngenkqubo yokusetyenziswa kwe-doping okanye yokugquma. Ezi zixhobo zisusa ngempumelelo itshaja engashukumiyo, zithintela umonakalo we-electrostatic kwii-wafers ze-semiconductor ezibuthathaka kunye nezixhobo. Izinto ezisisiseko zigcina amandla azo aphezulu e-flexural (361 MPa), ubunzima (16 GPa), kunye namandla e-dielectric (15×10⁶ V/m). Izixhobo ze-ceramic ezikhuselekileyo ze-ESD ziquka izixhobo zokugqibela, iiphini zokuphakamisa, iireyile zesikhokelo, kunye nezixhobo ezenziwe ngokwezifiso ze-FAB automation.
