I-Silicon Carbide (SiC) Based Vacuum Chuck yoBushushu obuphezulu kunye neendawo zePlasma
I-St.Cera's SiC-based ceramic chuck yenziwe nge-silicon carbide ecocekileyo kakhulu (i-batch S1111, i-SiC 99.72%, i-Si yamahhala 0.05%). Inika amandla okugoba alinganisiweyo angama-449 MPa, ubunzima bokuqhekeka obuyi-3.12 MPa·m¹/², kunye ne-elastic modulus engama-457 GPa. Ukuqhuba kobushushu obuqhelekileyo bezinto (120–150 W/m·K) kunye nokwanda kobushushu obuphantsi (4.0–4.5×10⁻⁶/℃) kuvumela ukurhawuzelelwa kobushushu ngokukhawuleza kunye nokugoba okuncinci kwe-wafer ngexesha lokujikeleza kobushushu. I-chuck ingacwangciswa njenge-vacuum chuck enemingxuma (ukuhamba kwegesi efanayo) okanye i-grooved standard chuck. Ngobushushu obuphezulu bokusetyenziswa obuyi-1600–1700°C (akukho mthwalo) kunye nokumelana nokukhukuliseka kweplasma okugqwesileyo, le chuck ifanelekile kwi-processing ye-wafer yobushushu obuphezulu (i-annealing, i-RTP) kunye nee-aggressive etch chambers apho ii-alumina chucks ziwohloka khona.
Iinkcukacha(ngokusekelwe kwingxelo yovavanyo lweSiC S1111 ebonelelweyo kunye namaxabiso aqhelekileyo):
| Ipropati | Ixabiso |
| Izinto eziphathekayo | I-SiC (99.72% SiC, 0.05% Si yasimahla) |
| Uxinano | 3.10–3.15 g/cm³ |
| Ukufunxwa kwamanzi | 0% |
| Amandla okuGuquka | I-449 MPa |
| Ukuqina Kokwaphuka | 3.12 MPa·m¹/² |
| Imodulus ye-Elastic | 457 GPa |
| Ubunzima bukaVickers | 25–28 GPa |
| Ukuqhuba kweThermal | 120–150 W/m·K |
| I-CTE (25–1000°C) | 4.0–4.5×10⁻⁶/℃ |
| Ubushushu bokusetyenziswa obuphezulu (akukho mthwalo) | 1600–1700°C |
| Ubude (ngaphezulu kwe-300mm) | ≤5 μm |
| Umphezulu wokugqiba | I-Ra ≤0.4 μm (idibene) |
Izicelo:
● Ukutshixa okushushu kakhulu (ukudibanisa, i-RTP, ukukhula kwe-epitaxial)
● I-Plasma etch chuck enokumelana okuphezulu kwe-fluorine
● Ukuphatha i-wafer encinci kunye nokufudumeza/ukupholisa okufanayo
● I-chuck enemingxuma yokuxhasa i-wafer engeyiyo edibeneyo
Ukuvelisa:
Ukusila kwe-SiC → ukugaywa ngokuchanekileyo kokusila kunye neprofayili yomphezulu → ukwakheka kwesakhiwo esinemingxuma okukhethwayo (kwi-vacuum chuck) → ukuleqa → ukucoca nge-ultrasonic. I-chuck nganye ihlolwa nge-100% ukuba ilula (i-laser interferometer) kunye nokufana kwe-vacuum (uvavanyo lokuhamba).
Ulawulo lwemeko:
● Ukujonga ubukhulu be-CMM (ububanzi, ubukhulu, iindawo zemingxunya)
● Umlinganiselo wobucaba ngokwe-ASTM nganye
● Uvavanyo lokuvuza kweHelium (kwii-vacuum chucks)
● Ukuqinisekiswa kwamandla okuguquguquka ngebhetshi nganye (ingxelo yovavanyo lwereferensi)
Iingenelo ngaphezu kwe-Alumina Chucks:
● Ukuhanjiswa kobushushu okuphezulu (120–150 vs 32 W/m·K ye-alumina) – Ukudluliselwa kobushushu okukhawulezayo nge-4 ×
● I-CTE esezantsi (4.0 vs 7.2×10⁻⁶/℃) – inciphisa uxinzelelo lobushushu be-wafer
● Ukumelana okuphezulu kweplasma – ubomi obude obuyi-10 × kwi-fluorine etch
● Ubushushu obuphezulu bokusetyenziswa (1600°C vs 800°C ye-alumina)
Ukwenziwa ngokwezifiso:
● Umphezulu onemingxuma okanye onemiqolo
● Ububanzi 100–450 mm, bujikelezileyo okanye bube sisikwere
● Indandatho yokutywinwa komda okanye izahlulo zokucoca indawo
● Ukhetho lokuxhaswa ngesinyithi lokufaka ukuqina okuphezulu
Yonke idatha yoomatshini engentla ivela kwingxelo yovavanyo olunikiweyo (ibhetshi S1111). Amaxabiso obushushu kunye nobunzima aqhelekile kolu didi lweSiC. Iichucks zeSiC ezinemingxuma zifuna ukucutshungulwa okongezelelweyo; nceda ubuze malunga nokufumaneka kwemingxuma ethile kunye nobukhulu bemingxuma.
