ibhena_yephepha

I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphatha I-Wafer Enobushushu Obuphezulu

I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphatha I-Wafer Enobushushu Obuphezulu

Inkcazo emfutshane:

I-St.Cera's SiC ceramic end effector yenziwe nge-silicon carbide ecocekileyo kakhulu (umxholo weSiC 99.72%, i-Si yamahhala 0.05%) kusetyenziswa izinto zebhetshi ye-S1111. Inika iipropati ezibalaseleyo zoomatshini: amandla e-flexural 449 MPa (elinganisiweyo), i-elastic modulus 457 GPa (elinganisiweyo), kunye nobunzima beVickers 25–28 GPa (eqhelekileyo). Uxinano oluphantsi (3.10–3.15 g/cm³, eqhelekileyo) lubonelela ngokuqina okuphezulu, okufanelekileyo kwiirobhothi zokudlulisa i-wafer ezikhawulezayo. Ngokuqhuba kobushushu obuyi-120–150 W/m·K (eqhelekileyo) kunye ne-thermal expansion coefficient ye-4.0–4.5×10⁻⁶/℃ (eqhelekileyo), le effector yokugqibela isusa ubushushu ngempumelelo kwaye igcina uzinzo olulinganayo ngexesha lokuphathwa kobushushu obuphezulu (ukuya kuthi ga kwi-1600–1700°C, akukho mthwalo). Umbala omnyama/ongwevu kunye nokufunxwa kwamanzi okungekho kuqinisekisa ukuhambelana kwegumbi lokucoca.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-St.Cera's SiC ceramic end effector yenziwe nge-silicon carbide ecocekileyo kakhulu (umxholo weSiC 99.72%, i-Si yamahhala 0.05%) kusetyenziswa izinto zebhetshi ye-S1111. Inika iipropati ezibalaseleyo zoomatshini: amandla e-flexural 449 MPa (elinganisiweyo), i-elastic modulus 457 GPa (elinganisiweyo), kunye nobunzima beVickers 25–28 GPa (eqhelekileyo). Uxinano oluphantsi (3.10–3.15 g/cm³, eqhelekileyo) lubonelela ngokuqina okuphezulu, okufanelekileyo kwiirobhothi zokudlulisa i-wafer ezikhawulezayo. Ngokuqhuba kobushushu obuyi-120–150 W/m·K (eqhelekileyo) kunye ne-thermal expansion coefficient ye-4.0–4.5×10⁻⁶/℃ (eqhelekileyo), le effector yokugqibela isusa ubushushu ngempumelelo kwaye igcina uzinzo olulinganayo ngexesha lokuphathwa kobushushu obuphezulu (ukuya kuthi ga kwi-1600–1700°C, akukho mthwalo). Umbala omnyama/ongwevu kunye nokufunxwa kwamanzi okungekho kuqinisekisa ukuhambelana kwegumbi lokucoca.

 

Iinkcukacha(ngokusekelwe kwingxelo yovavanyo lweSiC S1111 ebonelelweyo kunye namaxabiso aqhelekileyo):

Ipropati Ixabiso
Izinto eziphathekayo I-SiC (99.72% SiC, 0.05% Si yasimahla)
Umbala Mnyama/Mhlophe
Uxinano 3.10–3.15 g/cm³
Ukufunxwa kwamanzi 0%
Amandla okuGuquka 449 MPa (umndilili)
Ukuqina Kokwaphuka 3.12 MPa·m¹/² (umndilili)
Imodulus ye-Elastic 457 GPa
Ubunzima bukaVickers 25–28 GPa
Ukuqhuba Ubushushu (25°C) 120–150 W/m·K
I-CTE (25–1000°C) 4.0–4.5×10⁻⁶/℃
Ubushushu bokusetyenziswa obuphezulu (akukho mthwalo) 1600–1700°C

 

Izicelo:

● Ukuphathwa kwe-wafer yobushushu obuphezulu (i-post-anneal, i-RTP, i-epitaxy)

● Amagumbi okufaka i-plasma afuna ukumelana nokukhukuliseka okuphezulu

● Iirobhothi zokudlulisa ezikhawulezayo (ezilula, eziqinileyo)

 

Ukuvelisa:

Ukusila umgubo we-SiC → Ukusila ngokuchanekileyo kwe-CNC yeprofayili yengalo kunye neempawu zokuyifaka → ukuleqa umphezulu → ukucocwa nge-ultrasonic. Ukuhlolwa okunemilinganiselo eyi-100% kunye novavanyo lokuvuza kwe-helium kwizicelo ze-vacuum.

 

Ulawulo lwemeko:

● Ukuhlolwa kwe-CMM kobude, ububanzi, kunye nokuba sicaba

● Uvavanyo lwamandla olugobileyo ngebhetshi nganye (ngomgangatho wengxelo yovavanyo)

● Ukuhlolwa ngokubonakalayo phantsi kwe-microscope ukubona iziphene zomphezulu

 

Iingenelo ngaphezu kwe-Alumina okanye iMetal:

● I-modulus ye-elastic ephezulu ye-2× (457 vs ~380 GPa ye-alumina) – ukuphambuka okuncinci

● Ukuqhuba okuphezulu kobushushu obuyi-3 × - ukusasazwa kobushushu ngokukhawuleza

● Iyamelana >1600°C xa ithelekiswa ne-alumina engu-800°C emoyeni

● Ubunzima obuphantsi kunentsimbi – ukunciphisa ubunzima ngama-40%

 

Ukwenziwa ngokwezifiso:

Ubude yi-150–450 mm, iimilo ezisezantsi (i-edge grip, iBernoulli, i-flange flat), iipateni zeflange zokuxhoma ngokomzobo we-OEM.

*Lonke ulwazi loomatshini olungentla luvela kwingxelo yovavanyo olunikiweyo (ibhetshi S1111). Amaxabiso obushushu kunye nobunzima aqhelekile kweli banga leSiC; nceda unxibelelane nathi ukuze ufumane isiqinisekiso esithile.*


  • Ngaphambili:
  • Okulandelayo: