Indandatho yeCeramic ye-Alumina ecocekileyo ephezulu yeeCandelo zeNkqubo zeCVD / PVD
Indandatho yeseramikhi yaseSt.Cera yenzelwe ngokukodwa ukusetyenziswa kwiigumbi zenkqubo zeCVD (Chemical Vapor Deposition) kunye nePVD (Physical Vapor Deposition). Yenziwe nge-99.8% ye-alumina ephezulu-ecocekileyo (Al₂O₃), le ndandatho isebenza njenge-chamber liner, i-focus ring, okanye icandelo le-process kit ukuvala iplasma kunye nokukhusela iindonga zegumbi ekukhukulisekeni. Le nto inika ukumelana okuhle kweplasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ubomi obude kwiindawo zeplasma ezisekelwe kwi-fluorine. Ukunyamezelana okuchanekileyo (±0.05 mm kwi-ID/OD) kunye nokuthamba (≤10 μm) kuvumela ukubeka umda we-wafer rhoqo, ukuphucula ukufana kwe-deposition kunye nokunciphisa ukuveliswa kwamasuntswana.
Iinkcukacha (zisekelwe kwi-99.8% Al₂O₃):
| Ipropati | Ixabiso |
| Izinto eziphathekayo | I-99.8% ye-Alumina (i-Ivory) |
| Uxinano | 3.93 g/cm³ |
| Ukufunxwa kwamanzi | 0% |
| Amandla okuGuquka | I-361 MPa |
| Ukuqina Kokwaphuka | 3–4 MPa·m¹/² |
| Ubunzima bukaVickers | 16 GPa |
| IModulus kaYoung | 380 GPa |
| Ukuqhuba kweThermal | 32 W/m·k |
| Ukwanda kobushushu (25–1000°C) | 7.2×10⁻⁶/℃ |
| Amandla eDielectric | 15×10⁶ V/m |
| Ukuchasana Okuthile | >10¹⁴ Ω·cm |
| Ubushushu obuphezulu bokusebenza | 1600°C |
Izicelo:
- · Iiringi zokugxila kwigumbi le-CVD kunye neeringi zomphetho
- · Amaringi ekhabhathi yePVD kunye namaringi e-clamp
- · Iilayini zegumbi lokugrumba kunye neeringi zesigqubuthelo
- · Iiringi zokuvalelwa kweplasma kwiinkqubo ze-dielectric etch
Inkqubo yoMveliso:
Ukucinezela okungabonakaliyo → umatshini oluhlaza → ukunyibilikisa kwi-1600°C → Ukusila kwe-CNC ID/OD → ukuleqa umphezulu → ukucocwa nge-ultrasonic → ukuhlolwa kwe-100% CMM. Ukugqitywa komphezulu okugudileyo kakhulu (Ra ≤0.4 μm) kunciphisa ukunamathela kwamasuntswana.
Ulawulo lwemeko:
- · Ukujonga okulinganayo kwe-100% (i-ID, i-OD, ubukhulu, ukutyibilika)
- · Ukuhlolwa kokuqhekeka kwedayi ukuze kujongwe imifantu emincinci engaphezulu
- · Uvavanyo lwamandla e-dielectric ngokwe-ASTM D149 nganye
- · Akukho mbala okanye imingxunya ebonakalayo phantsi kwe-microscope engama-20 ×
Iingenelo ngaphezu kweeRings zeMetal okanye zeQuartz:
- · Ixesha elide eli-5–10× kunezangqa ze-aluminiyam kwi-fluorine plasma
- · Akukho kungcoliswa kwesinyithi kwiifilimu ezincinci
- · Ukumelana okuphezulu kweplasma kune quartz (akukho migxobhozo yokukhukuliseka)
- · Igcina ubushushu bombane >10¹⁴ Ω·cm nokuba sele isetyenzisiwe ixesha elide
Izinto Ezizezinye — I-Silicon Nitride (Si₃N₄):
Kwizicelo ezifuna ukuqina okuphezulu kokuqhekeka (6.2 MPa·m¹/²) kunye nokumelana okungcono kobushushu (umlinganiselo wokwandiswa kwe-3.2×10⁻⁶/℃), iiringi ze-Si₃N₄ ziyafumaneka. Nangona kunjalo, i-alumina ingabizi kakhulu kwiizicelo ezininzi ze-CVD/PVD. Nceda ucacise ukhetho lwezinto xa u-odola.
Ukwenziwa ngokwezifiso:
- · Imingxunya edlulayo, iiprofayili ezinezitebhisi, okanye ii-counterbores zokufakela
- · Umphezulu ogqunywe yi-Y₂O₃ ukuze kuphuculwe ukumelana ne-plasma (ukhetho)
- · Ukukrolwa kwenombolo yenxalenye / ikhowudi yelothi nge-laser
Phawula:Idatha engentla ilandela ngokungqongqo itheyibhile yepropathi ye-Al₂O₃ enikiweyo. Kwizangqa ze-Si₃N₄, jonga iphepha ledatha le-Si₃N₄ elahlukileyo elinikiweyo.
