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Ukucutshungulwa okwenziwe ngokwezifiso kwe-Al2O3 Ceramic Wafer Chuck
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Ipleyiti yeCeramic yezixhobo zeSemiconductor ezenziwe ngokwezifiso ze-ST.CERA
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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I-Alumina Vacuum Chuck eyi-12-intshi yokucubungula i-Wafer eyi-300mm
I-vacuum chuck ye-St.Cera eyi-intshi ezili-12 yenziwe ngokuchanekileyo nge-99.8% ye-alumina ephezulu ecocekileyo (Al₂O₃) yokuphatha i-wafer ye-300mm. I-chuck inomphezulu ogobileyo (ububanzi be-groove buyi-0.5–1.0 mm, i-pitch 2–3 mm) ukuqinisekisa ukusasazwa kwe-vacuum okufanayo kuyo yonke i-300mm ububanzi. Ukuthamba kugcinwa ngaphakathi kwe-5 μm, okuvumela ukufakwa kwe-wafer engena-warp ngexesha lokusika, ukugaya ngasemva, kunye nokuhlolwa. Amandla aphezulu e-flexural (361 MPa) kunye nobunzima (16 GPa) kuqinisekisa uzinzo lwexesha elide nangona kujikelezwa i-vacuum rhoqo.
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Izixhobo zeCeramic zeSemiconductor Probe Equipment
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Isithwali sezixhobo zeSemiconductor zeCeramic Plate
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Izixhobo zeSemiconductor Izixhobo zeCeramic
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
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Indandatho yeSeal ye-Alumina Ceramic ecocekileyo kakhulu yokutywinwa kwegumbi lobushushu obuphezulu
Indandatho yesitywino se-ceramic yaseSt.Cera yenzelwe njengendlela eyahlukileyo kwiindandatho ze-polymer O kwiindawo ezigqithisileyo apho ii-elastomers ziwohloka khona. Yenziwe nge-99.8% ye-alumina ecocekileyo kakhulu (Al₂O₃), le ndandatho yesitywino eqinileyo isetyenziswa kwiindawo zokutywina ezingashukumiyo — zihlala zidibene ne-gasket yesinyithi ethambileyo okanye i-graphite — ukubonelela nge-vacuum okanye i-gas containment ethembekileyo kumaqondo obushushu afikelela kwi-800°C nakwiindawo ezirhabaxa ze-plasma okanye zeekhemikhali. Le nto ayiniki gesi iphumayo, amandla aphezulu okuxinzelela (amandla angaphantsi e-flexural 361 MPa), kunye nokungasebenzi kakuhle kweekhemikhali (ukuxhathisa ii-halogens, ii-acids, kunye ne-alkalis ngaphandle kwe-HF). Iindawo zokutywina ezifakwe ngokuchanekileyo (ukuthe tyaba ≤5 μm, ukurhabaxa komphezulu we-Ra ≤0.2 μm) ziqinisekisa ukudibana okuqinileyo nentsimbi edibanayo okanye izinto ze-ceramic.
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Indandatho yokugxila yeChamber ye-Alumina ecocekileyo kakhulu yePlasma Etch kunye neeNkqubo zeCVD
Iring yokugxila kwigumbi likaSt.Cera yinxalenye ebalulekileyo yekhithi yenkqubo esetyenziswa kwizixhobo ze-plasma etch, CVD, kunye ne-PVD semiconductor. Yenziwe nge-99.8% ye-high-purity alumina (Al₂O₃), le ring ijikeleza umphetho we-wafer ukuze ivalele i-plasma kwaye iphucule ukusasazwa kwe-ion angular, ngaloo ndlela iphucula ukufana kwe-etch kumphezulu we-wafer. Le nto inika ukumelana okugqwesileyo kwe-plasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ukuthembeka kwexesha elide kwiindawo ze-plasma ezisekelwe kwi-fluorine okanye kwi-chlorine. I-Precision-ground ID/OD kunye ne-flatness (≤10 μm) zenza kube lula ukubeka umphetho we-wafer ngokuchanekileyo, ukunciphisa iziphene zomphetho kunye nokuveliswa kwamasuntswana.
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Indandatho yeCeramic ye-Alumina ecocekileyo ephezulu yeeCandelo zeNkqubo zeCVD / PVD
Indandatho yeseramikhi yaseSt.Cera yenzelwe ngokukodwa ukusetyenziswa kwiigumbi zenkqubo zeCVD (Chemical Vapor Deposition) kunye nePVD (Physical Vapor Deposition). Yenziwe nge-99.8% ye-alumina ephezulu-ecocekileyo (Al₂O₃), le ndandatho isebenza njenge-chamber liner, i-focus ring, okanye icandelo le-process kit ukuvala iplasma kunye nokukhusela iindonga zegumbi ekukhukulisekeni. Le nto inika ukumelana okuhle kweplasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ubomi obude kwiindawo zeplasma ezisekelwe kwi-fluorine. Ukunyamezelana okuchanekileyo (±0.05 mm kwi-ID/OD) kunye nokuthamba (≤10 μm) kuvumela ukubeka umda we-wafer rhoqo, ukuphucula ukufana kwe-deposition kunye nokunciphisa ukuveliswa kwamasuntswana.
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I-Porous Ceramic Vacuum Chuck yokuphatha iWafer eWarped
I-St.Cera's porous ceramic chuck yenziwe nge-high-purity alumina ene-porosity evulekileyo efanayo ye-30–45% kunye nobukhulu be-pore obuqala kwi-10 ukuya kwi-100 μm. Ngokungafaniyo nee-groove chucks eziqhelekileyo, umphezulu we-porous ubonelela nge-vacuum esasazekileyo kuyo yonke i-wafer ngasemva, ibamba ngokufanelekileyo ii-wafers ezigobileyo, ezibhityileyo, okanye ezingenanto ngaphandle kokuphakamisa okanye ukwaphuka komphetho. I-vacuum ethambileyo (ehlengahlengiswayo nge-restrictor) ikwathintela ukuphawulwa kwe-backside.
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I-Alumina-Based Porous Ceramic Vacuum Chuck yokuphatha i-Thin Wafer
I-chuck ye-alumina esekwe kwi-alumina yenziwe nge-99.6% ye-Al₂O₃ ecocekileyo kakhulu ene-porosity evulekileyo elawulwayo ye-30–45% kunye nobukhulu obufanayo be-pore ukusuka kwi-10 ukuya kwi-50 μm. Ngokungafaniyo nee-chucks ezine-grooved, umphezulu we-porous ubonelela nge-vacuum esasazekileyo kuyo yonke i-wafer ngasemva, ukuphelisa uphawu lomphetho kwaye uvumela ukubanjwa ngobunono kwee-wafers ezincinci kakhulu (≤100 μm) okanye ezigobileyo. Le nto inika amandla okugoba angama-≥250 MPa kunye nozinzo lobushushu olufikelela kwi-400°C emoyeni.
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Ipleyiti yoSasazo lweGesi yeAlumina ye-CVD/PVD Showerhead
Ipleyiti yokusasaza igesi yaseSt.Cera (intloko yeshawa) yenziwe ngomatshini ochanekileyo owenziwe nge-99.8% alumina ceramic ecocekileyo kakhulu. Inemibhobho emincinci (ububanzi obuyi-0.3–1.5 mm) eqinisekisa ukuhamba kwegesi okufanayo kumphezulu we-wafer ngexesha leenkqubo ze-CVD, PVD, okanye ze-ALD. Amandla aphezulu e-dielectric yepleyiti (>15×10⁶ V/m) kunye nokumelana neplasma kwenza kube yimfuneko ekufakweni kwefilimu encinci ye-semiconductor.
