ibhena_yephepha

Isipheli Sokuphela Kwesebumba

  • Ingalo yeRobhothi yeAlumina Ceramic ecocekileyo ephezulu yokuphatha iWafer

    Ingalo yeRobhothi yeAlumina Ceramic ecocekileyo ephezulu yokuphatha iWafer

    Ingalo yerobhothi ye-alumina ceramic yaseSt.Cera yenziwe ngokuchanekileyo nge-99.8% ye-Al₂O₃ (i-alumina) ecocekileyo kakhulu. Idibanisa amandla angaqhelekanga okugoba (361 MPa), ubunzima obuphezulu (16 GPa), kunye noxinano oluphantsi (3.93 g/cm³), nto leyo ebangela ukuba ingalo ibe lula kodwa iqine ukuze kudluliselwe i-wafer ye-semiconductor. I-coefficient yokwandiswa kobushushu bezinto (7.2×10⁻⁶/°C) ihambelana ne-silicon ngokusondeleyo, nto leyo enciphisa ukungalingani kobushushu ngexesha lokucubungula.

  • I-Bernoulli Ceramic End Effector — Ukuphathwa kweWafer engadibaniyo kwiiWafers ezibhityileyo nezibuthathaka

    I-Bernoulli Ceramic End Effector — Ukuphathwa kweWafer engadibaniyo kwiiWafers ezibhityileyo nezibuthathaka

    I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ii-wafers ngaphandle kokudibana ngokwasemzimbeni. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) okanye i-silicon carbide (SiC), inee-nozzles ezichanekileyo ezikhupha igesi ecinezelweyo ukwenza ifilimu yomoya encinci phakathi kwe-end effector kunye ne-wafer. Lo mgaqo wokungadibani ususa ungcoliseko lwangasemva, ukuqhekeka komphetho, kunye nomonakalo womphezulu, okwenza ukuba ilungele ii-wafers ezincinci (≤100 μm), ezibuthathaka, okanye ezigobileyo. I-substrate ye-ceramic inika amandla aphezulu okugoba (361 MPa ye-Al₂O₃; ukuya kuthi ga kwi-550–600 MPa ye-SiC), ubunzima obuphantsi, kunye nozinzo oluhle kakhulu, ukuqinisekisa indawo ephindaphindwayo kwiirobhothi zokudlulisa ii-wafer ezikhawulezayo.

  • Isiphumo Sokuphela KweseCeramic Esigqunywe yiTeflon – Umphezulu Onganamatheliyo Wokuphatha I-Wafer Enovakalelo

    Isiphumo Sokuphela KweseCeramic Esigqunywe yiTeflon – Umphezulu Onganamatheliyo Wokuphatha I-Wafer Enovakalelo

    I-St.Cera's Teflon (PTFE) egqunywe nge-ceramic effector idibanisa i-substrate ye-alumina enamandla aphezulu kunye ne-PTFE egqunywe nge-compact efanayo, engaphantsi kwe-friction (ubukhulu obuyi-15–30 μm). I-coating inika i-coefficient ephantsi kakhulu ye-friction (≤0.1), ukumelana kakuhle kweekhemikhali, kunye neempawu ezinganamatheliyo, ithintela ukunamathela kwe-wafer kunye nokuphelisa ungcoliseko lwangasemva. I-substrate ye-ceramic engaphantsi (99.8% Al₂O₃) inika amandla aphezulu e-flexural (361–1000 MPa), ukumelana nokuguguleka, kunye nozinzo lobushushu ukuya kuthi ga kwi-260°C (umda we-coating). Le effector ifanelekile ukuphatha ii-wafers ezithambileyo, ezincinci, okanye ezinamathelayo (umz., emva kwe-photoresist coating okanye iinkqubo zeekhemikhali).