I-SiC Vacuum Chuck ene-Porous exhaswa yiMetal-Backed ukuze iphathe iWafer egobileyo neyincinci
I-St.Cera's metal based ceramic vacuum chuck idibanisa umaleko we-ceramic we-silicon carbide (SiC) onemingxuma kunye nesiseko sesinyithi esenziwe ngokuchanekileyo (i-aluminium okanye intsimbi engagqwaliyo). Izinto ze-SiC ezinemingxuma (eziluhlaza okwesibhakabhaka-mnyama, ii-porosity ezingama-35–40%, ubungakanani be-pore 20–30 μm, i-permeability engama-60 ml/cm²·min) zibonelela ngokusasazwa kwe-vacuum okufanayo, okuthambileyo kuwo wonke umphezulu we-wafer, kususa uphawu lomphetho kunye nokuvumela inkxaso engabonakaliyo kwii-wafers ezincinci (≤100 μm) okanye ezigobileyo. Umaleko we-SiC ubonelela ngokwandiswa okuphantsi kobushushu (3.5×10⁻⁶/℃), ukuzinza kobushushu ukuya kuthi ga kwi-1000°C, kunye namandla aphakathi okugoba (32–35 MPa). Isiseko sesinyithi songeza ukuqina kwesakhiwo, ukufakwa lula ngemingxunya enemisonto, kunye nokukhuselwa ekuqhekekeni okubuthathaka. Le chuck ifanelekile ekugayweni ngasemva, ukugaywa, kunye nokulungiswa kwe-wafer yobushushu obuphezulu apho i-vacuum efanayo kunye nokuhambelana kobushushu kubalulekile.
Iinkcukacha (ezisekelwe kwidatha ye-SiC eneembobo ezibonelelweyo):
| Ipropati | Ixabiso |
| Izinto zobumba | I-Silicon Carbide enemingxuma (i-SiC ≥80%) |
| Umbala | Bulu-mnyama |
| Ukugquma | 35–40% |
| Ubungakanani bePore | 20–30 μm |
| Uxinano | 2.1–2.3 g/cm³ |
| Ukukwazi ukuchacha | 60 ml/cm²·umzuzu |
| Amandla okuGuquka | 32–35 MPa |
| I-Coefficient yokwandisa ubushushu (25-1000°C) | 3.5×10⁻⁶/℃ |
| Ubushushu obuphezulu bokusebenza | 1000°C |
| Ukumelana nombane | 10⁻¹⁰ Ω/cm (ngedatha nganye enikiweyo, eqhelekileyo kwiSiC eneembobo) |
| Izinto ezisisiseko zesinyithi | I-Aluminiyam 6061 okanye i-Stainless Steel 304 (ukhetho) |
| Ubukhulu besiseko sesinyithi | 10–30 mm (ngokwesiko) |
Qaphela: Amandla okugobeka aphantsi kune-SiC exineneyo ngenxa ye-porosity. Iimpawu zesiseko sesinyithi aziveli kwiitafile zeseramikhi.
Izicelo:
- · Ukusila ngasemva kwee-wafers ezibhityileyo (≤100 μm)
- · Ukufakelwa kwe-wafer egobileyo ukuze kunqunyulwe
- · Ukutshixa kwe-wafer eshushu kakhulu (ukuya kuthi ga kwi-1000°C)
- · Ukufakelwa kwe-vacuum kwi-substrates ezineembobo okanye ezibuthathaka
Ukuvelisa:
Ipleyiti yeSiC enemingxuma (eyenziwe ngee-pore formers, efakwe i-sintered) → idibene ukuze ibe tyaba ≤10 μm → isiseko sesinyithi esenziwe ngee-vacuum ports kunye nezici zokufakela → i-epoxy bonding okanye i-mechanical clamping → uvavanyo lokuvuza kwe-helium.
Ulawulo lwemeko:
- · Ubungakanani be-Porosity kunye ne-pore buqinisekiswe yi-SEM
- · Uvavanyo lokungangenisi umoya (ukuhamba komoya)
- · Ubuthe tyaba bulinganiswa nge-laser interferometer
- · Izinga lokuvuza kweHelium <1×10⁻⁹ Pa·m³/s
Iingenelo ngaphezu kwee-Grooved okanye ii-Dense Ceramic Chucks:
- · Akukho phawu lwe-wafer – i-vacuum efanayo engenazo imingxuma ehlukeneyo
- · Iimbobo ezizihlambululayo – ukuvaleka okunciphileyo
- · Izibambo zeewafers ezigobileyo (ukuya kuthi ga kwi-500 μm bow)
- · Isiseko sesinyithi sithintela ukwaphuka okubuthathaka kwaye senza kube lula ukuhlanganiswa
Imida:
- · Amandla aphantsi okugoba (32–35 MPa) – thintela ukulayisha okubangelwa kukungqubana
- · Ubushushu bokusebenza bulinganiselwe kwi-1000°C (i-SiC eneembobo), kodwa i-epoxy bond yesiseko sesinyithi ilinganiselwe kwi-≤200°C ngaphandle kokuba ibotshelelwe ngoomatshini
- · Ayilungelanga i-vacuum enoxinzelelo oluphezulu (isakhiwo esineembobo sinciphisa umahluko omkhulu we-vacuum)
Ukwenziwa ngokwezifiso:
- · Isiseko sesinyithi: i-aluminium (ekhanyayo), intsimbi engatyiwayo (emelana nokugqwala), i-Invar (ukwandiswa okuphantsi)
- · Ukubopha: i-epoxy (≤200°C) okanye i-mechanical clamp (ukuya kuthi ga kwi-500°C)
- · Indandatho yokutywina yomphetho yolawulo lwe-vacuum zone
Nceda uqaphele: Amandla e-flexural anikiweyo (32–35 MPa) aphantsi kakhulu kune-ceramics ezixineneyo ngenxa ye-porosity. Phatha ngononophelo ukuze uphephe ukuqhekeka komphetho.
