Idityaniswe nezibonelelo zokusebenza ezibanzi zemathiriyeli ye-Al2O3 kunye ne-BeO substrate, i-Aluminium Nitride(AlN) ceramic, eneconductivity ephezulu ye-thermal (ithiyori ye-monocrystal conductivity yi-275W/m▪k,ithiyori ye-polycrystal conductivity yi-70~k210W/m ▪ ), i-dielectric ephantsi rhoqo, i-coefficient yokwandisa i-thermal ehambelana ne-crystal crystal silicon enye, kunye neempawu ezilungileyo zokugquma umbane, yinto efanelekileyo ye-substrates yesekethe kunye nokupakishwa kwishishini le-microelectronics.Ikwayinto ebalulekileyo kubushushu obuphezulu besakhiwo se-ceramic amacandelo ngenxa yeempawu ezilungileyo zobushushu obuphezulu bomatshini, iipropathi zobushushu kunye nokuzinza kweekhemikhali.
Uxinaniso lwethiyori ye-AlN yi-3.26g / cm3, ubunzima be-MOHS yi-7-8, i-resistivity yokushisa kwegumbi inkulu kune-1016Ωm, kunye nokwanda kwe-thermal yi-3.5 × 10-6 / ℃ (iqondo lokushisa kwe-200 ℃).Iiseramikhi ezicocekileyo ze-AlN azinambala kwaye ziyabonakala, kodwa ziya kuba nemibala eyahlukeneyo njengengwevu, engwevu emhlophe okanye etyheli ekhanyayo, ngenxa yobumdaka.
Ukongeza kwi-thermal conductivity ephezulu, iikeramikhi ze-AlN zikwanazo ezi zibonelelo zilandelayo:
1. Ukufakwa kakuhle kombane;
2. I-coefficient yokwandiswa kwe-thermal efanayo kunye ne-silicon monocrystal, iphakamileyo kwizinto ezifana ne-Al2O3 kunye ne-BeO;
3. Amandla aphezulu omatshini kunye namandla afanayo aguquguqukayo kunye neekeramics ze-Al2O3;
4. Ilahleko ye-dielectric ephakathi kunye ne-dielectric;
5. Xa kuthelekiswa ne-BeO, i-thermal conductivity ye-ceramics ye-AlN ayichaphazeli kangako ukushisa, ngakumbi ngaphezu kwe-200℃;
6. Ukumelana nokushisa okuphezulu kunye nokuxhathisa ukubola;
7. Ayinatyhefu;
8. Ukusetyenziswa kwishishini le-semiconductor, ishishini le-chemical metallurgy kunye namanye amacandelo oshishino.
Ixesha lokuposa: Jul-14-2023